Abstract: The Silicon Carbide (SiC) MOSFET is widely recognized for its exceptional performance attributes. However, two primary issues restrict the operational capabilities of SiC MOSFET power ...
Supports most practical Explicit Runge-Kutta (ERK) methods. Tested on SD1.5, SDXL, and SD3. Decrease it to set more strict tolerances (better results) in exchange for slower inference times. Increase ...
To continue reading this content, please enable JavaScript in your browser settings and refresh this page. Preview this article 1 min Jeff Ruby Culinary Entertainment ...
Abstract: Detailed temperature field distribution of high-power insulated gate bipolar transistor (IGBT) modules is essential information for reliability analysis and thermal design of power ...
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