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Abstract: Integrating phase change material (PCM) in a power module could mitigate the temperature surge during short-term overcurrent. However, PCM in the path of heat conduction could impede cooling ...
Abstract: The parasitic inductance and dynamic current sharing performances of multichip silicon carbide power module packaging limit the device's performance. Moreover, high electrical properties ...
The new 1200 V SiC MOSFET power modules in SOT-227 packages target high-efficiency automotive, energy, and industrial systems. Vishay Intertechnology has introduced five new 1200 V silicon carbide ...