The objective of the circuit is to create a power supply using V-MOSFET technology to support amplifiers while producing 100 Watts power output. Vertical Metal Oxide Semiconductor Field Effect ...

Reverse polarity is one of the most common causes of circuit failure, from hobby projects to industrial systems. The good ...

NoMIS Power has claimed a breakthrough in improving the short-circuit withstand time (SCWT) of silicon-carbide (SiC) MOSFETs. This addresses one of the key challenges limiting the widespread adoption ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation ...

Infineon says its silicon carbide power semiconductors have been selected for Toyota’s new bZ4X battery-electric vehicle.

GaN-, and silicon-based power transistors, modules, and other basic building blocks for more robust, efficient, and ...

Find a downloadable version of this story in pdf format at the end of the story. TYPICAL HIGH-SIDE, n-channel, hot-swap “soft-switch” systems use a charge pump to drive the gate of an external MOSFET ...

Taiwan-based power MOSFET and diode suppliers, primarily involved in the supply chain for notebooks and other PCs, anticipate demand will recover around mid-2024. Save my User ID and Password Some ...

In 2025, Mitsubishi Electric plans to begin mass production of power modules equipped with SiC MOSFETs. Save my User ID and Password Some subscribers prefer to save their log-in information so they do ...

Alpha and Omega Semiconductor unveils 600V Super Junction MOSFET platform, expanding its high‑voltage power portfolio.

Radiation dosimetry is pivotal in ensuring both patient safety during radiotherapy and efficient monitoring in industrial and environmental settings. Metal Oxide Semiconductor Field-Effect Transistors ...