A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. “Cryogenic propulsion ...

TOKYO, JAPAN. Saki Corp. has announced the introduction of its 3D-CT automated X-ray inspection (AXI) system designed specifically for the inspection and measurement of insulated gate bipolar ...

Power Integrations launched a family of ASIL B-qualified, dual-channel, plug-and-play gate-driver boards for both SiC MOSFETs and silicon IGBTs. At PCIM Europe, Power Integrations announced the SCALE ...

LINCOLN, England, Oct. 31, 2018 /CNW/ - Dynex Power Inc. (TSXV: DNX), a leading manufacturer of high power semiconductors and electronic equipment, is pleased to announce the launch of ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

According to independent consulting and research organization IDTechEX, any vehicle manufacturer without a compelling line up of electric vehicles by 2025 is signing its “death warrant.” It’s not ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM Europe – Power Integrations (NASDAQ: POWI), the leader in gate driver technology for medium- and high-voltage inverter applications, today announced the SCALE ...

Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode ...