From the last several lithography nodes, in the 14 to 10nm range, to the latest nodes, in the 7 to 5nm range, the requirements for patterning and image transfer materials have increased dramatically.

High-throughput process development (HTPD) based on combining digital twins and experimental results speeds process development and helps scientists perform more screenings with fewer experiments. A ...

Upcoming 14A and 10A process nodes will use high-NA EUV anamorphic scanners, which will require two stitched half-fields to achieve the equivalent wafer exposure area of previous-generation scanners, ...