As a part of JST PRESTO program, associate professor Masaharu Kobayashi, Institute of industrial Science, The University of Tokyo, has experimentally clarified the operation mechanism of low voltage ...
As a part of JST PRESTO program, Associate professor Masaharu Kobayashi, Institute of Industrial Science, the University of Tokyo, has developed a ferroelectric FET (FeFET) with ferroelectric-HfO2 and ...
Masaharu Kobayashi of Tokyo University has developed a ferroelectric FET (FeFET) with ferroelectric-HfO2 and ultrathin IGZO channel. Nearly ideal subthreshold swing (SS) and mobility higher than ...
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
HfO 2 is a prospective high-k replacement for SiO 2 for future integrated circuits. We study energetic of amorphous and nanocrystalline hafnium oxide by high temperature oxide melt solution ...
Material development for semiconductor and thin film materials requires a full understanding of the material characteristics and how they impact each other. The Thermo Scientific™ Nexsa™ XPS System ...
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