Morning Overview on MSN
China unveils what it claims is the tiniest, most efficient transistor ever
Researchers at Peking University have built a transistor they say is the world’s smallest and most energy-efficient, ...
A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
This whitepaper gives a compact overview of the recommended gate drive concepts for both GIT (gate injection transistor) and SGT (Schottky gate transistor) product families. A versatile standard drive ...
Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.
Advanced Micro Devices has developed two sets of next-generation transistors using different approaches that produce higher levels of performance than conventional transistors, the company said at the ...
A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.
Artificial intelligence (AI) has become the workload that defines today’s semiconductor scaling. Whether in hyperscale data centers training foundation models or at the network edge executing ...
Toshiba has launched the ST2000JXH35A, a new 6500V/2000A press pack injection enhanced gate transistor (IEGT) designed for high-voltage converters used in DC power transmission systems, industrial ...
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