From time to time I field questions about ferroelectric memories, also known as FRAMs or FeRAMs. These devices have been making something of a splash lately. Texas Instruments has recently been ...
Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by ...
Ferroelectric capacitors can be made as thin as 30nm to add memory between the metallisation layers of ICs, according to Institute of Science Tokyo. It “demonstrates strong electric polarisation ...
As system designers seek to manipulate larger data sets while reducing power consumption, ferroelectric memory may be part of the solution. It offers an intermediate step between the speed of DRAM and ...
An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it ...
Researchers reduce the total thickness of capacitor stacks while maintaining strong polarization properties. (Nanowerk News) Modern electronic technology is rapidly advancing towards miniaturization, ...
As a part of JST PRESTO program, associate professor Masaharu Kobayashi, Institute of industrial Science, The University of Tokyo, has experimentally clarified the operation mechanism of low voltage ...
Dublin, Jan. 30, 2026 (GLOBE NEWSWIRE) -- The "Ferroelectric Memory-Display Market Report 2026" has been added to ResearchAndMarkets.com's offering. The report provides comprehensive insights into the ...
An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it ...
As a part of JST PRESTO program, Associate professor Masaharu Kobayashi, Institute of industrial Science, The University of Tokyo, has experimentally clarified the operation mechanism of low voltage ...
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